 |
| SEM image of SiC nanowires [author: mkwiel] |
Silicon carbide (briefly called as SiC) is a wide-gap semiconductor with many superb properties, such as high hardness, high thermal conductivity, low coefficient of thermal expansion, and excellent resistance to erosion and corrosion [1, 2]. It also exhibits interesting electronic and optical properties, which vary with the size of particles. The relationship between grain size and material properties has been studied for a large number of materials [3–6], including SiC [7– 1]. Recently SiC nanowires (NWs) have been produced and although their mechanical properties are very promising [8, 12–14] little is known about their microstructure and electronic/optical properties. SiC nanowires have been obtained by various methods, including carbothermal reduction of Si and carbon nanotubes [15], chemical vapour deposition [16, 17], reaction between SiCl4 and CCl4 with sodium as co-reductant [18], carbon nanotube-confined reaction [19, 20], and annealing carbon nanotubes covered with Si [21]. These methods either require high temperature for vapour–vapour [15] or solid–vapour [19, 20] reactions, or need a metal catalyst, Fe, Cu, or Ni, [16, 17]. In this study, we present an alternative synthesis of SiC nanowires that does not require catalysts or very high temperatures.
If you are interested of full text of this article, please let me know in comments, write your email and I will sent it to you. Best Regards.
No comments:
Post a Comment